Search for: All records

We report the design, fabrication, and testing of an atomic layer deposition (ALD) system that is capable of reflection high energy electron diffraction (RHEED) in a single chamber. The details and specifications of the system are described and include capabilities of RHEED at varied accelerating voltages, sample rotation (azimuthal) control, sample height control, sample heating up to set temperatures of 1050 °C, and either single- or dual-differential pumping designs. Thermal and flow simulations were used to justify selected system dimensions as well as carrier gas/precursor mass flow rates. Temperature calibration was conducted to determine actual sample temperatures that are necessary for meaningful analysis of thermally induced transitions in ALD thin films. Several demonstrations of RHEED in the system are described. Calibration of the camera length was conducted using a gold thin film by analyzing RHEED images. Finally, RHEED conducted at a series of increasing temperatures was used to monitor the crystallization of an ALD HfO2 thin film. The crystallization temperature and the ring pattern were consistent with the monoclinic structure as determined by separate x-ray diffraction-based measurements. 

The structure and optical characteristics of thin (∼30 nm) wurtzite AlInN films grown pseudomorphic on free-standing, c-plane GaN substrates are presented. The Al1−xInxN layers are grown by metalorganic chemical vapor deposition, resulting in films with varying In content from x = 0.142 to 0.225. They are measured using atomic force microscopy, x-ray diffraction, reciprocal space mapping, and spectroscopic ellipsometry (SE). The pseudomorphic AlInN layers provide a set where optical properties can be determined without additional variability caused by lattice relaxation, a crucial need for designing devices. They have smooth surfaces (rms < 0.29 nm) with minimum pit areas when the In content is near lattice-matched to GaN. As expected, SE shows that the refractive index increases and the bandgap energy decreases with increased In-content. Plots of bandgap energy vs In content are fitted with a single bowing parameter of 3.19 eV when using bandgap energies for AlN and InN pseudomorphic to GaN, which is lower than previous measurements and closer to theoretical predictions. 

Abstract Pure molybdenum disulfide (MoS₂) solid lubricant coatings could attain densities comparable to doped films (and the associated benefits to wear rate and environmental stability) through manipulation of the microstructure via deposition parameters. Unfortunately, pure films can exhibit highly variable microstructures and mechanical properties due to processes that are not controlled during deposition (i.e., batch-to-batch variation). This work focuses on developing a relationship between density, hardness, friction, and wear for pure sputtered MoS₂coatings. Results show that dense films (ρ = 4.5 g/cm³) exhibit a 100 × lower wear rate compared to porous coatings (ρ = 3.04–3.55 g/cm³). The tribological performance of high density pure MoS₂coatings is shown to surpass that of established composite coatings, achieving a wear rate 2 × (k = 5.74 × 10^–8mm³/Nm) lower than composite MoS₂/Sb₂O₃/Au in inert environments.